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JSMSEMI IRFL4310TRPBF-JSM product image
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JSMSEMI IRFL4310TRPBF-JSMRoHS

Manufacturer
JSMSEMIAsian Brands
MPN
IRFL4310TRPBF-JSM
LCSC Part #
C18192151
Packaging
SOT-223
Customer #
Key Attributes
MOSFET N-CH 100V 5A SOT-223
Datasheetpdf iconJSMSEMI IRFL4310TRPBF-JSM
In-Stock: 1,535
1,535 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2042$ 0.1736$ 0.87
50+$ 0.1603$ 0.1363$ 6.82
150+$ 0.1415$ 0.1203$ 18.05
1,000+$ 0.1181$ 0.1004$ 100.40
2,000+$ 0.1077$ 0.0916$ 183.20
5,000+$ 0.1014$ 0.0862$ 431.00
Standard Packaging1000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerJSMSEMI
PackagingSOT-223
Drain to Source Voltage100V
Output Capacitance(Coss)38pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)33pF
RDS(on)137mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)765pF
Gate Charge(Qg)18nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging1000
Sales UnitPiece

Introduction

AI Translation

The IRFL4310TRPBF is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The IRFL4310TRPBF meet the RoHS and Green Product requirement with full function reliability approved.

Features

AI Translation
  • Green Device Available
  • Super Low Gate Charge
  • Excellent Cdv/dt effect decline
  • Advanced high cell density Trench technology