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JSMSEMI STB30NF10T4-JSMRoHS

Manufacturer
JSMSEMIAsian Brands
MPN
STB30NF10T4-JSM
LCSC Part #
C18191554
Packaging
TO-263-2L
Customer #
Key Attributes
100V 35A 4V 115W 38mΩ@10V 1 N-channel N-Channel TO-263-2L Single FETs, MOSFETs RoHS
Datasheetpdf iconJSMSEMI STB30NF10T4-JSM
In-Stock: 899
899 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.7314$ 0.73
10+$ 0.5887$ 5.89
30+$ 0.5189$ 15.57
100+$ 0.4476$ 44.76
500+$ 0.4054$ 202.70
800+$ 0.3827$ 306.16
Standard Packaging800/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerJSMSEMI
PackagingTO-263-2L
Drain to Source Voltage100V
Output Capacitance(Coss)276pF
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation115W
Reverse Transfer Capacitance (Crss@Vds)88pF
RDS(on)38mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.331nF
Gate Charge(Qg)-
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging800
Sales UnitPiece

Introduction

AI Translation

The SI9945DY is an N-channel logic-level enhancement-mode power MOSFET fabricated using advanced high cell density trench technology. This high-density process is specifically designed to minimize on-resistance. These devices are particularly suited for low-voltage applications, notebook computer power management, and other battery-powered circuits.

Features

AI Translation
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

Applications

AI Translation
  • Switching Mode Power Supply (SMPS)
  • Uninterruptible Power Supply (UPS)
  • Power Factor Correction (PFC)