JSMSEMI IRLML6401GTRPBF-JSM
| Manufacturer | JSMSEMIAsian Brands |
| MPN | IRLML6401GTRPBF-JSM |
| LCSC Part # | C18190989 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | 20V 4.2A 1V 1.5W 110mΩ@1.5V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 167pF | |
| Current - Continuous Drain(Id) | 4.2A | |
| Operating Temperature - | - | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 1.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 75.5pF | |
| RDS(on) | 110mΩ@1.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 989pF | |
| Gate Charge(Qg) | 11.1nC@4.5V | |
| Type | P-Channel |
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
IRLML6401GTRPBF is a P-channel logic-level enhancement mode power MOSFET, fabricated using advanced trench technology with high cell density. This high-density process is specifically designed to minimize on-resistance. These devices are particularly suited for low-voltage applications requiring low in-line power dissipation in a surface mount package with extremely small footprint.
Features
- -20V / -4.3A, RDS(ON) = 30mΩ (typ.) @VGS = -4.5V
- -20V / -3.5A, RDS(ON) = 40mΩ (typ.) @VGS = -2.5V
- -20V / -2.0A, RDS(ON) = 56mΩ (typ.) @VGS = -1.8V
- -20V / -1.0A, RDS(ON) = 85mΩ (typ.) @VGS = -1.5V
- Ultra-low RDS(ON) optimized design
- Excellent on-resistance and maximum DC current capability
- Fully RoHS compliant
- SOT23-3 package
- P-Channel
Applications
- Power Management
- Portable Devices
- DC/DC Converters
- Load Switches
- Digital Cameras
- LCD Monitor Inverters
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0765 | $ 0.77 |
| 100+ | $ 0.061 | $ 6.10 |
| 300+ | $ 0.0532 | $ 15.96 |
| 3,000+ | $ 0.0474 | $ 142.20 |
| 6,000+ | $ 0.0427 | $ 256.20 |
| 9,000+ | $ 0.0404 | $ 363.60 |
Standard Packaging3000/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 167pF | |
| Current - Continuous Drain(Id) | 4.2A | |
| Operating Temperature - | - | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 1.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 75.5pF | |
| RDS(on) | 110mΩ@1.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 989pF | |
| Gate Charge(Qg) | 11.1nC@4.5V | |
| Type | P-Channel |
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
IRLML6401GTRPBF is a P-channel logic-level enhancement mode power MOSFET, fabricated using advanced trench technology with high cell density. This high-density process is specifically designed to minimize on-resistance. These devices are particularly suited for low-voltage applications requiring low in-line power dissipation in a surface mount package with extremely small footprint.
Features
- -20V / -4.3A, RDS(ON) = 30mΩ (typ.) @VGS = -4.5V
- -20V / -3.5A, RDS(ON) = 40mΩ (typ.) @VGS = -2.5V
- -20V / -2.0A, RDS(ON) = 56mΩ (typ.) @VGS = -1.8V
- -20V / -1.0A, RDS(ON) = 85mΩ (typ.) @VGS = -1.5V
- Ultra-low RDS(ON) optimized design
- Excellent on-resistance and maximum DC current capability
- Fully RoHS compliant
- SOT23-3 package
- P-Channel
Applications
- Power Management
- Portable Devices
- DC/DC Converters
- Load Switches
- Digital Cameras
- LCD Monitor Inverters
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

