JSMSEMI IRLML0060TRPBF-JSM
| Manufacturer | JSMSEMIAsian Brands |
| MPN | IRLML0060TRPBF-JSM |
| LCSC Part # | C18190977 |
| Packaging | SOT-23-3 |
| Customer # | |
| Key Attributes | 350mW 60V 3A 2V 105mΩ@10V 1 N-channel N-Channel SOT-23-3 Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-23-3 | |
| Output Capacitance(Coss) | 34pF | |
| Pd - Power Dissipation | 350mW | |
| Drain to Source Voltage | 60V | |
| Configuration | Standalone | |
| Current - Continuous Drain(Id) | 3A | |
| Operating Temperature - | - | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 19.5pF | |
| RDS(on) | 105mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 247pF | |
| Gate Charge(Qg) | 6nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The IRLMLO060TRPBF-JSM utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation at gate voltages as low as 2.5V. This device is suitable for battery protection or other switching applications.
Features
AI Translation
- High power and current handling capability
- Lead-free product
- Surface mount package
Applications
AI Translation
- Battery switch
- DC/DC converter
In-Stock: 2,820
2,820 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1543 | $ 0.77 |
| 50+ | $ 0.1223 | $ 6.12 |
| 150+ | $ 0.1085 | $ 16.28 |
| 500+ | $ 0.0914 | $ 45.70 |
| 3,000+ | $ 0.0837 | $ 251.10 |
| 6,000+ | $ 0.0791 | $ 474.60 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
$
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-23-3 | |
| Output Capacitance(Coss) | 34pF | |
| Pd - Power Dissipation | 350mW | |
| Drain to Source Voltage | 60V | |
| Configuration | Standalone | |
| Current - Continuous Drain(Id) | 3A | |
| Operating Temperature - | - | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 19.5pF | |
| RDS(on) | 105mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 247pF | |
| Gate Charge(Qg) | 6nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The IRLMLO060TRPBF-JSM utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation at gate voltages as low as 2.5V. This device is suitable for battery protection or other switching applications.
Features
AI Translation
- High power and current handling capability
- Lead-free product
- Surface mount package
Applications
AI Translation
- Battery switch
- DC/DC converter
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



