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JSMSEMI IRLML0030TR-JSM product image
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JSMSEMI IRLML0030TR-JSMRoHS

Manufacturer
JSMSEMIAsian Brands
MPN
IRLML0030TR-JSM
LCSC Part #
C18190975
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 30V 6A SOT-23
Datasheetpdf iconJSMSEMI IRLML0030TR-JSM
In-Stock: 2,070
2,070 In stock, ships now
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QtyUnit PriceTotal Amount
10+$ 0.0747$ 0.75
100+$ 0.0595$ 5.95
300+$ 0.0519$ 15.57
3,000+$ 0.0462$ 138.60
6,000+$ 0.0417$ 250.20
9,000+$ 0.0394$ 354.60
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerJSMSEMI
PackagingSOT-23
Drain to Source Voltage30V
Output Capacitance(Coss)60pF
Current - Continuous Drain(Id)6A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1.5W
Reverse Transfer Capacitance (Crss@Vds)49pF
RDS(on)40mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)414pF
Gate Charge(Qg)6nC@4.5V
Vgs±20V
TypeN-Channel
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Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The IRLMLoo30TR is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package.

Features

AI Translation
  • 30V/6.0A, R Ds(ON)=18mΩ(typ.)@VGs=10V
  • 30V/4.8A, R Ds(ON)=25mΩ(typ.)@VGs=4.5V
  • Super high design for extremely low RDs(ON)
  • Exceptional on-resistance and Maximum DC current capability
  • Full RoHS compliance
  • SOT23 package design

Applications

AI Translation
  • PowerManagement
  • Portable Equipment
  • DC/DC Converter
  • Load Switch
  • DSC