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JSMSEMI IRFR120NTRPBF-JSMRoHS

Manufacturer
JSMSEMIAsian Brands
MPN
IRFR120NTRPBF-JSM
LCSC Part #
C18190924
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 100V 15A TO-252
Datasheetpdf iconJSMSEMI IRFR120NTRPBF-JSM
In-Stock: 2,100
2,100 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1925$ 0.1733$ 0.87
50+$ 0.1525$ 0.1373$ 6.87
150+$ 0.1354$ 0.1219$ 18.29
500+$ 0.114$ 0.1026$ 51.30
2,500+$ 0.1044$ 0.0940$ 235.00
5,000+$ 0.0987$ 0.0889$ 444.50
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerJSMSEMI
PackagingTO-252
Drain to Source Voltage100V
Output Capacitance(Coss)60pF
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation50W
RDS(on)115mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)25pF
Number1 N-channel
Input Capacitance(Ciss)890pF
Gate Charge(Qg)24nC
Vgs±20V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET utilizes advanced trench technology and design to deliver excellent RDS(ON) performance with low gate charge, making it suitable for a wide range of applications.

Features

AI Translation
  • VDS = 100 V, ID = 15 A, RDS(ON) < 100 mΩ at VGS = 10 V
  • Low gate charge
  • Eco-friendly devices available
  • Advanced high cell-density trench technology for ultra-low RDS(ON)
  • Excellent package thermal dissipation performance