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JSMSEMI IRF7416TRPBF-JSM product image
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JSMSEMI IRF7416TRPBF-JSMRoHS

Manufacturer
JSMSEMIAsian Brands
MPN
IRF7416TRPBF-JSM
LCSC Part #
C18190882
Packaging
SOP-8
Customer #
Key Attributes
MOSFET P-CH 30V 9.7A SOP-8
Datasheetpdf iconJSMSEMI IRF7416TRPBF-JSM
In-Stock: 1,575
1,575 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1961$ 0.1569$ 0.78
50+$ 0.1713$ 0.1371$ 6.86
150+$ 0.1606$ 0.1285$ 19.28
500+$ 0.1473$ 0.1179$ 58.95
2,500+$ 0.1414$ 0.1132$ 283.00
4,000+$ 0.1379$ 0.1104$ 441.60
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerJSMSEMI
PackagingSOP-8
Drain to Source Voltage30V
Output Capacitance(Coss)319pF
Current - Continuous Drain(Id)9.7A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2.7V
Pd - Power Dissipation3W
RDS(on)28mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)295pF
Number1 P-Channel
Input Capacitance(Ciss)1.9nF
Gate Charge(Qg)-
TypeP-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The IRF7416TRPBF is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching

Features

AI Translation
  • -30V/-9.7A, RDS(ON)=19.5mΩ (typ.)@VGs=-10V
  • -30V/-7.0A, RDs(on)=23.5mΩ (typ.) @VGs=-4.5V
  • Super high design for extremely low Rps(ON)
  • Exceptional on-resistance and Maximum DC current capability
  • Full RoHS compliance
  • SOP8 package design

Applications

AI Translation
  • High Frequency Point-of-Load Synchronous
  • Newworking DC-DC Power System
  • Load Switch