JSMSEMI IRF7105TRPBF-JSM
| Manufacturer | JSMSEMIAsian Brands |
| MPN | IRF7105TRPBF-JSM |
| LCSC Part # | C18190852 |
| Packaging | SOP-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH+P-CH ARR 30V 7.2A SOP-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOP-8 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 448pF | |
| Current - Continuous Drain(Id) | 7.2A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.6V | |
| Pd - Power Dissipation | 1.44W | |
| Reverse Transfer Capacitance (Crss@Vds) | 41pF | |
| RDS(on) | 28mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 373pF | |
| Gate Charge(Qg) | 11nC@10V | |
| Type | N-Channel + P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The IRF7105TRPBF uses advanced trench technology MOSFETs to provide excellent RDS (ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications.
Features
AI Translation
- 100% UIS tested
- 100% Rg tested
- ESD rating--HBM1b, MSL Rating--MSL Level2
In-Stock: 2,970
2,970 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1296 | $ 0.65 |
| 50+ | $ 0.1126 | $ 5.63 |
| 150+ | $ 0.1052 | $ 15.78 |
| 500+ | $ 0.0961 | $ 48.05 |
| 2,500+ | $ 0.092 | $ 230.00 |
| 4,000+ | $ 0.0896 | $ 358.40 |
Standard Packaging4000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOP-8 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 448pF | |
| Current - Continuous Drain(Id) | 7.2A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.6V | |
| Pd - Power Dissipation | 1.44W | |
| Reverse Transfer Capacitance (Crss@Vds) | 41pF | |
| RDS(on) | 28mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 373pF | |
| Gate Charge(Qg) | 11nC@10V | |
| Type | N-Channel + P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The IRF7105TRPBF uses advanced trench technology MOSFETs to provide excellent RDS (ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications.
Features
AI Translation
- 100% UIS tested
- 100% Rg tested
- ESD rating--HBM1b, MSL Rating--MSL Level2
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



