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JSMSEMI FDV301N-JSM
| Manufacturer | JSMSEMIAsian Brands |
| MPN | FDV301N-JSM |
| LCSC Part # | C18190755 |
| Packaging | SOT-23-3 |
| Customer # | |
| Key Attributes | MOSFET N-CH 25V 0.22A SOT-23-3 |
| Datasheet |  JSMSEMI FDV301N-JSM |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-23-3 | |
| Drain to Source Voltage | 25V | |
| Output Capacitance(Coss) | 6pF | |
| Current - Continuous Drain(Id) | 220mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 350mW | |
| RDS(on) | 5Ω@2.7V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.3pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9.5pF | |
| Gate Charge(Qg) | - | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel MOSFET utilizes advanced trench technology and design to achieve excellent on-resistance (RDS(on)) at low gate charge, making it suitable for a wide range of applications.
Features
AI Translation
- 0.22 A, 25 V
- RDS(ON)=4 Ω @ VGS = 4.5 V
- RDS(ON)=5 Ω @ VGS = 2.7 V
- Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th)<1.5V
- Gate-Source Zener for ESD ruggedness.
-
6 kV Human Body Model
- Replace multiple NPN digital transistors with one DMOSFET.
In-Stock: 2,570
2,570 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0565$ 0.0452 | $ 0.45 |
| 100+ | $ 0.0442$ 0.0354 | $ 3.54 |
| 300+ | $ 0.0381$ 0.0305 | $ 9.15 |
| 3,000+ | $ 0.0356$ 0.0285 | $ 85.50 |
| 6,000+ | $ 0.0319$ 0.0256 | $ 153.60 |
| 9,000+ | $ 0.03$ 0.0240 | $ 216.00 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-23-3 | |
| Drain to Source Voltage | 25V | |
| Output Capacitance(Coss) | 6pF | |
| Current - Continuous Drain(Id) | 220mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 350mW | |
| RDS(on) | 5Ω@2.7V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.3pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9.5pF | |
| Gate Charge(Qg) | - | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel MOSFET utilizes advanced trench technology and design to achieve excellent on-resistance (RDS(on)) at low gate charge, making it suitable for a wide range of applications.
Features
AI Translation
- 0.22 A, 25 V
- RDS(ON)=4 Ω @ VGS = 4.5 V
- RDS(ON)=5 Ω @ VGS = 2.7 V
- Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th)<1.5V
- Gate-Source Zener for ESD ruggedness.
-
6 kV Human Body Model
- Replace multiple NPN digital transistors with one DMOSFET.
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |