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JSMSEMI FDS4435BZ-JSM product image
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JSMSEMI FDS4435BZ-JSMRoHS

Manufacturer
JSMSEMIAsian Brands
MPN
FDS4435BZ-JSM
LCSC Part #
C18190707
Packaging
SOP-8
Customer #
Key Attributes
MOSFET P-CH 30V 9.7A SOP-8
Datasheetpdf iconJSMSEMI FDS4435BZ-JSM
In-Stock: 2,240
2,240 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1499$ 0.75
50+$ 0.1171$ 5.86
150+$ 0.103$ 15.45
500+$ 0.0855$ 42.75
3,000+$ 0.0777$ 233.10
6,000+$ 0.073$ 438.00
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerJSMSEMI
PackagingSOP-8
Drain to Source Voltage30V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)9.7A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2.7V
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)295pF
RDS(on)35mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.9nF
Gate Charge(Qg)-
TypeP-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The FDS4435BZ is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching

Features

AI Translation
  • -30V/-9.7A, RDS(ON)=19.5mΩ (typ.)@VGs=-10V
  • -30V/-7.0A, RDs(on)=23.5mΩ (typ.)@VGs=-4.5V
  • Super high design for extremely low Rps(ON)
  • Exceptional on-resistance and Maximum DC current capability
  • Full RoHS compliance
  • SOP8 package design

Applications

AI Translation
  • High Frequency Point-of-Load Synchronous
  • Newworking DC-DC Power System
  • Load Switch