JSMSEMI IRF1405PBF-JSM
| Manufacturer | JSMSEMIAsian Brands |
| MPN | IRF1405PBF-JSM |
| LCSC Part # | C18187869 |
| Packaging | TO-220-3L |
| Customer # | |
| Key Attributes | MOSFET 60V 170A TO-220-3L |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-220-3L | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 1.016nF | |
| Current - Continuous Drain(Id) | 170A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 358W | |
| RDS(on) | 5mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 487pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | - | |
| Type | - |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel MOSFET utilizes advanced trench technology and design to achieve excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Applications
AI Translation
- Switch Mode Power Supply (SMPS)
- Uninterruptible Power Supply (UPS)
- Power Factor Correction (PFC)
In-Stock: 30
30 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.6645 | $ 0.66 |
| 10+ | $ 0.53 | $ 5.30 |
| 50+ | $ 0.4729 | $ 23.65 |
| 100+ | $ 0.4064 | $ 40.64 |
| 500+ | $ 0.3678 | $ 183.90 |
| 1,000+ | $ 0.3462 | $ 346.20 |
Standard Packaging50/Full Tube | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-220-3L | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 1.016nF | |
| Current - Continuous Drain(Id) | 170A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 358W | |
| RDS(on) | 5mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 487pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | - | |
| Type | - |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel MOSFET utilizes advanced trench technology and design to achieve excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Applications
AI Translation
- Switch Mode Power Supply (SMPS)
- Uninterruptible Power Supply (UPS)
- Power Factor Correction (PFC)
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



