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HL S8N10RoHS

Manufacturer
HLAsian Brands
MPN
S8N10
LCSC Part #
C18164397
Packaging
SOT-89-3L
Customer #
Key Attributes
MOSFET N-CH 100V 6.5A SOT-89-3L
Datasheetpdf iconHL S8N10
In-Stock: 15,920
15,920 In stock, ships now
Minimum: 10Multiple: 10Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
10+$ 0.0645$ 0.65
100+$ 0.0536$ 5.36
300+$ 0.0481$ 14.43
1,000+$ 0.0357$ 35.70
5,000+$ 0.0324$ 162.00
10,000+$ 0.0308$ 308.00
Standard Packaging1000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHL
PackagingSOT-89-3L
Drain to Source Voltage100V
Output Capacitance(Coss)28.9pF
Current - Continuous Drain(Id)6.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)1.4pF
RDS(on)140mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)206pF
Gate Charge(Qg)-
TypeN-Channel
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Introduction

AI Translation

The S8N10 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The S8N10 meets the RoHS and Green Product requirement with full function reliability approved.

Features

AI Translation
  • Green Device Available
  • Super Low Gate Charge
  • Excellent CdV/dt effect decline
  • Advanced high cell density Trench technology