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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HL | |
| Packaging | SOT-89-3L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 28.9pF | |
| Current - Continuous Drain(Id) | 6.5A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.4pF | |
| RDS(on) | 140mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 206pF | |
| Gate Charge(Qg) | - | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HL | |
| Packaging | SOT-89-3L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 28.9pF | |
| Current - Continuous Drain(Id) | 6.5A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.4pF | |
| RDS(on) | 140mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 206pF | |
| Gate Charge(Qg) | - | |
| Type | N-Channel |
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Introduction
AI Translation
The S8N10 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The S8N10 meets the RoHS and Green Product requirement with full function reliability approved.
Features
AI Translation
- Green Device Available
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- Advanced high cell density Trench technology
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 9,080
9,080 In stock, ships now
Minimum: 10Multiple: 10Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0603 | $ 0.60 |
| 100+ | $ 0.0493 | $ 4.93 |
| 300+ | $ 0.0438 | $ 13.14 |
| 1,000+ | $ 0.0359 | $ 35.90 |
| 5,000+ | $ 0.0326 | $ 163.00 |
| 10,000+ | $ 0.0309 | $ 309.00 |
Standard Packaging1000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HL | |
| Packaging | SOT-89-3L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 28.9pF | |
| Current - Continuous Drain(Id) | 6.5A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.4pF | |
| RDS(on) | 140mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 206pF | |
| Gate Charge(Qg) | - | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HL | |
| Packaging | SOT-89-3L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 28.9pF | |
| Current - Continuous Drain(Id) | 6.5A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.4pF | |
| RDS(on) | 140mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 206pF | |
| Gate Charge(Qg) | - | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The S8N10 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The S8N10 meets the RoHS and Green Product requirement with full function reliability approved.
Features
AI Translation
- Green Device Available
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- Advanced high cell density Trench technology
C18164397 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| 10N10Q | HL | SOT-89-3L | 2,030 | $ 0.06 |