Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HL | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 50pF | |
| Current - Continuous Drain(Id) | 4A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 1.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF | |
| RDS(on) | 85mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 553pF | |
| Gate Charge(Qg) | 11.8nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 20 |
| Multiple | 20 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The 2319 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The 2319 meets the RoHS and Green Product with full function reliability approved.
Features
AI Translation
- Green Device Available
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- Advanced high cell density Trench technology
Applications
AI Translation
- PWM applications - Load switch - Power management
In-Stock: 3,260
3,260 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 20+ | $ 0.0348 | $ 0.70 |
| 200+ | $ 0.0269 | $ 5.38 |
| 600+ | $ 0.0225 | $ 13.50 |
| 3,000+ | $ 0.0191 | $ 57.30 |
| 9,000+ | $ 0.0168 | $ 151.20 |
| 21,000+ | $ 0.0156 | $ 327.60 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HL | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 50pF | |
| Current - Continuous Drain(Id) | 4A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 1.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF | |
| RDS(on) | 85mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 553pF | |
| Gate Charge(Qg) | 11.8nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 20 |
| Multiple | 20 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The 2319 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The 2319 meets the RoHS and Green Product with full function reliability approved.
Features
AI Translation
- Green Device Available
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- Advanced high cell density Trench technology
Applications
AI Translation
- PWM applications - Load switch - Power management
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



