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ST STD3N80K5RoHS

Manufacturer
ST
MPN
STD3N80K5
LCSC Part #
C181036
Packaging
DPAK
Customer #
Key Attributes
MOSFET N-CH 800V 2.5A DPAK
Datasheetpdf iconST STD3N80K5
In-Stock: 272
272 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.9126$ 0.91
10+$ 0.7483$ 7.48
30+$ 0.6653$ 19.96
100+$ 0.584$ 58.40
500+$ 0.5345$ 267.25
1,000+$ 0.509$ 509.00
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingDPAK
Configuration-
Drain to Source Voltage800V
Output Capacitance(Coss)14pF
Current - Continuous Drain(Id)2.5A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)0.6pF
RDS(on)3.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)130pF
Gate Charge(Qg)9.5nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Features

AI Translation
  • Industry’s lowest RDS(on) X area
  • Industry’s best FoM (figure of merit)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected

Applications

AI Translation
  • Switching applications