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TI CSD13381F4RoHS

Manufacturer
TI
MPN
CSD13381F4
LCSC Part #
C179868
Packaging
PicoStar-3
Customer #
Key Attributes
MOSFET N-CH 12V 2.1A PicoStar-3
Datasheetpdf iconTI CSD13381F4
In-Stock: 5,215
5,215 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.0887$ 0.44
50+$ 0.0742$ 3.71
150+$ 0.0667$ 10.01
500+$ 0.0606$ 30.30
3,000+$ 0.0584$ 175.20
6,000+$ 0.0569$ 341.40
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTI
PackagingPicoStar-3
Drain to Source Voltage12V
Output Capacitance(Coss)62pF
Current - Continuous Drain(Id)2.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)3.3pF
RDS(on)400mΩ@1.8V
Number1 N-channel
Input Capacitance(Ciss)200pF
Gate Charge(Qg)1.4nC@4.5V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This 140 mΩ, 12V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize space consumption in many handheld and mobile applications. This technology enables at least 60% reduction in package size while replacing standard small-signal MOSFETs.

Features

AI Translation
  • Low on-resistance
  • Low Qg and Qgd
  • Low threshold voltage
  • Ultra-compact package size (0402 case size)
  • Ultra-thin package
  • Maximum height: 0.36 mm
  • Integrated ESD protection diode
  • Rated > 4 kV HBM
  • Rated > 2 kV CDM
  • Lead-free and halogen-free
  • RoHS compliant

Applications

AI Translation
  • Optimized for load switch applications
  • Optimized for general-purpose switch applications
  • Single-cell battery applications
  • Handheld and mobile applications