Nexperia BSS84AKW,115
| Manufacturer | |
| MPN | BSS84AKW,115 |
| LCSC Part # | C179347 |
| Packaging | SC-70 |
| Customer # | |
| Key Attributes | MOSFET P-CH 50V 150mA SC-70 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | SC-70 | |
| Drain to Source Voltage | 50V | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 150mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Pd - Power Dissipation | 260mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.3pF | |
| RDS(on) | 7.5Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 36pF | |
| Gate Charge(Qg) | 350pC@5V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
AI Translation
- Logic level compatible
- ESD protection up to 1 kV
- Extremely fast switching
- AEC-Q101 qualified
- Trench MOSFET technology
Applications
AI Translation
- Relay driver
- High-side loadswitch
- High-speed line driver
- Switching circuits
In-Stock: 860
860 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1152 | $ 0.58 |
| 50+ | $ 0.0913 | $ 4.57 |
| 150+ | $ 0.0794 | $ 11.91 |
| 500+ | $ 0.0704 | $ 35.20 |
| 3,000+ | $ 0.0633 | $ 189.90 |
| 6,000+ | $ 0.0597 | $ 358.20 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | SC-70 | |
| Drain to Source Voltage | 50V | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 150mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Pd - Power Dissipation | 260mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.3pF | |
| RDS(on) | 7.5Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 36pF | |
| Gate Charge(Qg) | 350pC@5V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
AI Translation
- Logic level compatible
- ESD protection up to 1 kV
- Extremely fast switching
- AEC-Q101 qualified
- Trench MOSFET technology
Applications
AI Translation
- Relay driver
- High-side loadswitch
- High-speed line driver
- Switching circuits
C179347 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



