MSKSEMI NTMFS4C03NT1G-MS
| Manufacturer | MSKSEMIAsian Brands |
| MPN | NTMFS4C03NT1G-MS |
| LCSC Part # | C17702949 |
| Packaging | DFN5x6-8L |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 150A DFN5x6-8L |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MSKSEMI | |
| Packaging | DFN5x6-8L | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 340pF | |
| Current - Continuous Drain(Id) | 150A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 187W | |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF | |
| RDS(on) | 3.2mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.345nF | |
| Gate Charge(Qg) | 56.9nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The NTMFS4C03NT1G-MS uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
Features
AI Translation
- VDS = 30V
- ID = 150A
- RDS(ON) < 2.4mΩ @ VGS = 10V
Applications
AI Translation
- Battery protection
- Load switch
- Uninterruptible power supply
In-Stock: 126
126 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.5205$ 0.4685 | $ 0.47 |
| 10+ | $ 0.4225$ 0.3803 | $ 3.80 |
| 30+ | $ 0.3742$ 0.3368 | $ 10.10 |
| 100+ | $ 0.3259$ 0.2934 | $ 29.34 |
| 500+ | $ 0.2958$ 0.2663 | $ 133.15 |
| 1,000+ | $ 0.2807$ 0.2527 | $ 252.70 |
Standard Packaging5000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MSKSEMI | |
| Packaging | DFN5x6-8L | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 340pF | |
| Current - Continuous Drain(Id) | 150A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 187W | |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF | |
| RDS(on) | 3.2mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.345nF | |
| Gate Charge(Qg) | 56.9nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The NTMFS4C03NT1G-MS uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
Features
AI Translation
- VDS = 30V
- ID = 150A
- RDS(ON) < 2.4mΩ @ VGS = 10V
Applications
AI Translation
- Battery protection
- Load switch
- Uninterruptible power supply
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



