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ROHM TT8M1TR product image
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ROHM TT8M1TRRoHS

Manufacturer
ROHM
MPN
TT8M1TR
LCSC Part #
C17639097
Packaging
TSST-8
Customer #
Key Attributes
MOSFET N-CH+P-CH ARR 20V 2.5A TSST-8
Datasheetpdf iconROHM TT8M1TR
In-Stock: 100
100 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 0.9212$ 0.92
10+$ 0.9066$ 9.07
30+$ 0.8968$ 26.90
100+$ 0.8871$ 88.71
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerROHM
PackagingTSST-8
Current - Continuous Drain(Id)2.5A
Pd - Power Dissipation1.25W
RDS(on)280mΩ@1.5V
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage20V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)90pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.27nF
Gate Charge(Qg)12nC@4.5V
Operating Temperature-
Output Capacitance(Coss)100pF
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Introduction

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A 350 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The device's excellent ruggedness makes it ideal for both digital and analog transmitter applications.

Features

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  • Low on-resistance.
  • High power package (TSST8).
  • Low voltage drive (1.5V drive).

Applications

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  • Switching