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MICROCHIP APTM50AM35FTG
| Manufacturer | |
| MPN | APTM50AM35FTG |
| LCSC Part # | C17630282 |
| Packaging | - |
| Customer # | |
| Key Attributes | 99A 781W 39mΩ@10V 5V FET, MOSFET Arrays RoHS |
| Datasheet |  MICROCHIP APTM50AM35FTG |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | MICROCHIP | |
| Packaging | - | |
| Configuration | Half-Bridge | |
| Current - Continuous Drain(Id) | 99A | |
| Pd - Power Dissipation | 781W | |
| RDS(on) | 39mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Drain to Source Voltage | 500V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF | |
| Number | - | |
| Input Capacitance(Ciss) | 14nF | |
| Gate Charge(Qg) | 280nC | |
| Operating Temperature | -40℃~+150℃ | |
| Output Capacitance(Coss) | 2.8nF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | MICROCHIP | |
| Packaging | - | |
| Configuration | Half-Bridge | |
| Current - Continuous Drain(Id) | 99A | |
| Pd - Power Dissipation | 781W | |
| RDS(on) | 39mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 500V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF | |
| Number | - | |
| Input Capacitance(Ciss) | 14nF | |
| Gate Charge(Qg) | 280nC | |
| Operating Temperature | -40℃~+150℃ | |
| Output Capacitance(Coss) | 2.8nF |
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Introduction
AI Translation
NPT2010 is a GaN HEMT general-purpose amplifier optimized for operation from DC to 2.2 GHz. The device supports CW, pulsed, and linear operating modes, delivering 100 W (50 dBm) output power in an industry-standard metal-ceramic package with bolt-down flange.
Features
AI Translation
- Power MOS 7 Fast Recovery Epitaxial Diode FET (FREDFET)
- Low on-state resistance (RDson)
- Low input capacitance and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Rugged and robust
- Kelvin source for easy drive
- Ultra-low stray inductance
- Symmetrical design
- Lead frame for power connections
- Integrated NTC thermistor for temperature monitoring
- Highly integrated
Applications
AI Translation
- Welding converters
- Switch-mode power supplies
- Uninterruptible power supplies
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 201.6991 | $ 201.70 |
| 200+ | $ 189.4357 | $ 37887.14 |
| 500+ | $ 183.105 | $ 91552.50 |
| 1,000+ | $ 179.9766 | $ 179976.60 |
Standard Packaging1/Full Bag | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | MICROCHIP | |
| Packaging | - | |
| Configuration | Half-Bridge | |
| Current - Continuous Drain(Id) | 99A | |
| Pd - Power Dissipation | 781W | |
| RDS(on) | 39mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Drain to Source Voltage | 500V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF | |
| Number | - | |
| Input Capacitance(Ciss) | 14nF | |
| Gate Charge(Qg) | 280nC | |
| Operating Temperature | -40℃~+150℃ | |
| Output Capacitance(Coss) | 2.8nF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | MICROCHIP | |
| Packaging | - | |
| Configuration | Half-Bridge | |
| Current - Continuous Drain(Id) | 99A | |
| Pd - Power Dissipation | 781W | |
| RDS(on) | 39mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 500V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF | |
| Number | - | |
| Input Capacitance(Ciss) | 14nF | |
| Gate Charge(Qg) | 280nC | |
| Operating Temperature | -40℃~+150℃ | |
| Output Capacitance(Coss) | 2.8nF |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
NPT2010 is a GaN HEMT general-purpose amplifier optimized for operation from DC to 2.2 GHz. The device supports CW, pulsed, and linear operating modes, delivering 100 W (50 dBm) output power in an industry-standard metal-ceramic package with bolt-down flange.
Features
AI Translation
- Power MOS 7 Fast Recovery Epitaxial Diode FET (FREDFET)
- Low on-state resistance (RDson)
- Low input capacitance and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Rugged and robust
- Kelvin source for easy drive
- Ultra-low stray inductance
- Symmetrical design
- Lead frame for power connections
- Integrated NTC thermistor for temperature monitoring
- Highly integrated
Applications
AI Translation
- Welding converters
- Switch-mode power supplies
- Uninterruptible power supplies
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |