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DIODES DMN62D0UDW-13 product image
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DIODES DMN62D0UDW-13RoHS

Manufacturer
DIODES
MPN
DMN62D0UDW-13
LCSC Part #
C17625429
Packaging
SOT-363
Customer #
Key Attributes
350mA 3Ω@2.5V 410mW 2V 2 N-Channel SOT-363 FET, MOSFET Arrays RoHS
Datasheetpdf iconDIODES DMN62D0UDW-13
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1+$ 0.1412$ 0.14
200+$ 0.0564$ 11.28
500+$ 0.0545$ 27.25
1,000+$ 0.0535$ 53.50
Standard Packaging10000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerDIODES
PackagingSOT-363
Current - Continuous Drain(Id)350mA
RDS(on)3Ω@2.5V
Pd - Power Dissipation410mW
Gate Threshold Voltage (Vgs(th))2V
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)2.4pF
Number2 N-Channel
Input Capacitance(Ciss)32pF
Gate Charge(Qg)500pC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)3.9pF
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Introduction

AI Translation

This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Features

AI Translation
  • Dual N-Channel MOSFET
  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Ultra-Small Surface Mount Package
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device

Applications

AI Translation
  • Motor Control
  • Power Management Functions