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MICROCHIP APT40GP60JDQ2 product image
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MICROCHIP APT40GP60JDQ2RoHS

Manufacturer
MICROCHIP
MPN
APT40GP60JDQ2
LCSC Part #
C17621756
Packaging
SOT-227B-4
Customer #
Key Attributes
284W 86A 600V PT (Punch-Through) SOT-227B-4 IGBT Modules RoHS
Datasheetpdf iconMICROCHIP APT40GP60JDQ2

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/IGBT Modules
ManufacturerMICROCHIP
PackagingSOT-227B-4
Pd - Power Dissipation284W
Current - Collector(Ic)86A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance(Cies)4.61nF@25V
IGBT TypePT (Punch-Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Operating Temperature-55℃~+150℃@(Tj)
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging1
Sales UnitPiece

Introduction

AI Translation

POWER MOS 7 IGBT is a new generation of high-voltage power IGBT. Utilizing punch-through technology, it is well suited for many high-frequency, high-voltage switching applications and is optimized for high-frequency switched-mode power supplies.

Features

AI Translation
  • Low conduction loss
  • 100kHz operation at 400V, 25A
  • Low gate charge
  • 200kHz operation at 400V, 16A
  • Ultra-fast tail current turn-off
  • SSOA rated
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QtyUnit Price(Reference Only)Total Amount
1+$ 105.5818$ 105.58
200+$ 42.1291$ 8425.82
500+$ 40.7205$ 20360.25
1,000+$ 40.0252$ 40025.20
Standard Packaging1/Full Tube
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