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MICROCHIP APT65GP60J product image
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MICROCHIP APT65GP60JRoHS

Manufacturer
MICROCHIP
MPN
APT65GP60J
LCSC Part #
C17614200
Packaging
SOT-227B-4
Customer #
Key Attributes
431W 130A 600V PT (Punch-Through) SOT-227B-4 IGBT Modules RoHS
Datasheetpdf iconMICROCHIP APT65GP60J

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/IGBT Modules
ManufacturerMICROCHIP
PackagingSOT-227B-4
Pd - Power Dissipation431W
Current - Collector(Ic)130A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance(Cies)7.4nF@25V
IGBT TypePT (Punch-Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Operating Temperature-55℃~+150℃@(Tj)
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging1
Sales UnitPiece

Introduction

AI Translation

POWER MOS 7 IGBT is a new generation high-voltage power IGBT. Utilizing punch-through technology, it is well suited for many high-frequency, high-voltage switching applications and is optimized for high-frequency switch-mode power supplies.

Features

AI Translation
  • Low conduction losses
  • 100 kHz operation at 400V, 33A
  • Low gate charge
  • 50 kHz operation at 400V, 47A
  • Ultra-fast tail current turn-off
  • SSOA rated
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QtyUnit Price(Reference Only)Total Amount
1+$ 95.3714$ 95.37
200+$ 38.0547$ 7610.94
500+$ 36.7823$ 18391.15
1,000+$ 36.1537$ 36153.70
Standard Packaging1/Full Tube
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