Navitas NV6133A
| Manufacturer | |
| MPN | NV6133A |
| LCSC Part # | C17614064 |
| Packaging | QFN-30(6x8) |
| Customer # | |
| Key Attributes | 330mΩ 700V High Side Switch Active High 4A 1 QFN-30(6x8) Power Driver Modules RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Power Driver Modules | |
| Manufacturer | Navitas | |
| Packaging | QFN-30(6x8) | |
| RDS(on) | 330mΩ | |
| Operating Temperature - | -55℃~+150℃ | |
| Voltage - Supply | 700V | |
| Features | Overcurrent Protection;Short-Circuit Protection;Over temperature protection;Under-voltage lockout | |
| Type | High Side Switch | |
| Control Input Logic | Active High | |
| Maximum Continuous Current | 4A | |
| Number of Channels | 1 |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This GaNFast power IC integrates a high performance eMode GaN FET with integrated gate drive to achieve unprecedented high-frequency and high efficiency operation. GaNSense technology is also integrated which enables real-time, accurate sensing of voltage, current and temperature to further improve performance and robustness not achieved by any discrete GaN or discrete silicon device. GaNSense enables integrated loss-less current sensing which eliminates external current sensing resistors and increases system efficiency. GaNSense also enables short circuit and over-temperature protection to increase system robustness, while auto-standby mode increases light, tiny & no-load efficiency. These GaN ICs combine the highest dV/dt immunity, high-speed integrated drive and industrystandard low-profile, low-inductance, SMT QFN packaging to enable designers to achieve simple, quick and reliable solutions. Navitas’ GaN IC technology extends the capabilities of traditional topologies such as flyback, half-bridge, buck/boost, LLC and other resonant converters to reach MHz+ frequencies with very high efficiencies and low EMI to achieve unprecedented power densities at a very attractive cost structure.
Features
- Monolithically-integrated gate drive
- Wide VCC range (10 to 30 V)
- Programmable turn-on dV/dt
- 200 V/ns dV/dt immunity
- 800 V Transient Voltage Rating
- 700 V Continuous Voltage Rating
- Low 330 mΩ resistance
- Zero reverse recovery charge
- 2 MHz operation
- Integrated loss-less current sensing
- Short-circuit protection
- Over-temperature protection
- Autonomous low-current standby mode
- Auto-standby mode input
- 6×8 mm footprint, 0.85 mm profile
- Minimized package inductance
- Large cooling pad
- RoHS, Pb-free, REACH-compliant
- Up to 40% energy savings vs Si solutions
- System level 4kg CO₂ Carbon Footprint reduction
Applications
- AC-DC, DC-DC, DC-AC
- QR flyback, AHB, Buck, Boost, Half bridge, Full bridge, LLC resonant, Class D, PFC
- Wireless power, Solar Micro-inverters
- LED lighting, TV SMPS, Server, Telecom
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 4.6162 | $ 4.62 |
| 200+ | $ 1.8429 | $ 368.58 |
| 500+ | $ 1.7802 | $ 890.10 |
| 1,000+ | $ 1.7496 | $ 1749.60 |
Standard Packaging5000/Full Reel | ||
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8536500090 |
| USHTS | 8536507000 |
| TARIC | 8536500300 |
| CAHTS | 8536501000 |
| BRHTS | 85365090 |
| INHTS | 85365090 |
| MXHTS | 8536.50.09 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8536500090 |
| USHTS | 8536507000 |
| TARIC | 8536500300 |
| Type | Details |
|---|---|
| CAHTS | 8536501000 |
| BRHTS | 85365090 |
| INHTS | 85365090 |
| MXHTS | 8536.50.09 |

