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Infineon BFP740FESDH6327XTSA1 product image
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Infineon BFP740FESDH6327XTSA1RoHS

Manufacturer
Infineon
MPN
BFP740FESDH6327XTSA1
LCSC Part #
C17591844
Packaging
TSFP-4
Customer #
Key Attributes
TRANS NPN 4.2V 45mA TSFP-4
Datasheetpdf iconInfineon BFP740FESDH6327XTSA1
In-Stock: 923
923 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.5807$ 0.58
10+$ 0.4734$ 4.73
30+$ 0.4197$ 12.59
100+$ 0.366$ 36.60
500+$ 0.3335$ 166.75
1,000+$ 0.3172$ 317.20
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar RF Transistors
ManufacturerInfineon
PackagingTSFP-4
Current - Collector Cutoff400nA
Collector - Emitter Voltage VCEO4.2V
DC Current Gain160
Pd - Power Dissipation160mW
Operating Temperature-55℃~+150℃
Current - Collector(Ic)45mA
Transition frequency(fT)47GHz
typeNPN
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The BFP740FESD is a wideband NPN RF heterojunction bipolar transistor (HBT) with an integrated ESD protection.

Features

AI Translation
  • Unique combination of high end RF performance and robustness: 21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits
  • NFmin = 0.6 dB at 2.4 GHz and 0.8 dB at 5.5 GHz, 3 V, 6 mA
  • High gain Gms = 26 dB at 2.4 GHz and Gma = 20.5 dB at 5.5 GHz, 3 V, 25 mA
  • OIP3 = 23.5 dBm at 5.5 GHz, 3 V, 25 mA

Applications

AI Translation
  • Wireless communications: WLAN, WiMax, UWB
  • Satellite communication systems: GNSS navigation systems (GPS, GLONASS, BeiDou, Galileo), satellite radio (SDARs, DAB) and C - band LNB
  • Multimedia applications such as portable TV, CATV and FM radio
  • ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications