Winbond W29N01HWBINA TR
| Manufacturer | WinbondAsian Brands |
| MPN | W29N01HWBINA TR |
| LCSC Part # | C17591713 |
| Packaging | VFBGA-63(9x11) |
| Customer # | |
| Key Attributes | 1.7V~1.95V 1Gbit VFBGA-63(9x11) Memory (ICs) RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory (ICs) | |
| Manufacturer | Winbond | |
| Packaging | VFBGA-63(9x11) | |
| Voltage - Supply | 1.7V~1.95V | |
| Memory Size | 1Gbit | |
| Operating temperature | -40℃~+85℃ | |
| Program / Erase Cycles | - | |
| Clock Frequency | - | |
| Features | Copy back write function;Software reset function;Hardware write protection function;Bad block management function;ECC error correction function | |
| Data Retention - TDR (Year) | 10 years | |
| Block Erase Time(tBE) | 2ms | |
| Page Programming Time (Tpp) | 25ns | |
| Write Cycle Time(tWC) | 25ns | |
| Interface | - | |
| Standby Supply Current | 10uA |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The W29N01HZ/W (1G-bit) NAND Flash memory provides a storage solution for embedded systems with limited space, pins and power. It is ideal for code shadowing to RAM, solid state applicati
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 7.9127 | $ 7.91 |
| 200+ | $ 3.1581 | $ 631.62 |
| 500+ | $ 3.0521 | $ 1526.05 |
| 1,000+ | $ 3.0006 | $ 3000.60 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory (ICs) | |
| Manufacturer | Winbond | |
| Packaging | VFBGA-63(9x11) | |
| Voltage - Supply | 1.7V~1.95V | |
| Memory Size | 1Gbit | |
| Operating temperature | -40℃~+85℃ | |
| Program / Erase Cycles | - | |
| Clock Frequency | - | |
| Features | Copy back write function;Software reset function;Hardware write protection function;Bad block management function;ECC error correction function | |
| Data Retention - TDR (Year) | 10 years | |
| Block Erase Time(tBE) | 2ms | |
| Page Programming Time (Tpp) | 25ns | |
| Write Cycle Time(tWC) | 25ns | |
| Interface | - | |
| Standby Supply Current | 10uA |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The W29N01HZ/W (1G-bit) NAND Flash memory provides a storage solution for embedded systems with limited space, pins and power. It is ideal for code shadowing to RAM, solid state applicati
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |

