LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
Central CMRDM3575 TR PBFREE product image
Images for reference only

Central CMRDM3575 TR PBFREERoHS

Manufacturer
Central
MPN
CMRDM3575 TR PBFREE
LCSC Part #
C17562353
Packaging
SOT-963
Customer #
Key Attributes
50mA 125mW 3.5Ω@1.2V 1.5V 1 N-Channel + 1 P-Channel SOT-963 FET, MOSFET Arrays RoHS
Datasheetpdf iconCentral CMRDM3575 TR PBFREE

Products Specifications

Show similar products (0) >
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerCentral
PackagingSOT-963
Current - Continuous Drain(Id)50mA
Pd - Power Dissipation125mW
RDS(on)3.5Ω@1.2V
Gate Threshold Voltage (Vgs(th))1.5V
Drain to Source Voltage20V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)3.5pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)60pF
Gate Charge(Qg)-
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)50pF
Report an ErrorShow similar products (0) >

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging8000
Sales UnitPiece

Introduction

AI Translation

The CMRDM3575 from CENTRAL SEMICONDUCTOR consists of complementary N-channel and P-channel enhancement-mode silicon MOSFETs, designed for high-speed pulse amplifier and driver applications. These MOSFETs feature low on-resistance rDS(ON) and low threshold voltage.

Features

AI Translation
  • Power dissipation: 125 mW
  • Low package height: 0.5 mm (maximum)
  • Low on-resistance r DS(ON)
  • Low threshold voltage
  • Logic-level compatible
  • Small SOT-963 surface-mount package

Applications

AI Translation
  • Load/Power Switch
  • Power Converter Circuit
  • Battery-Powered Portable Devices
Out of Stock
Notify Me
Add to BOM List
QtyUnit Price(Reference Only)Total Amount
1+$ 0.1485$ 0.15
200+$ 0.0593$ 11.86
500+$ 0.0573$ 28.65
1,000+$ 0.0563$ 56.30
Standard Packaging8000/Full Reel
Better price for more quantity?
$