TOSHIBA SSM6N7002KFU,LXH
| Manufacturer | |
| MPN | SSM6N7002KFU,LXH |
| LCSC Part # | C17538147 |
| Packaging | TSSOP-6(SC-88)SOT-363 |
| Customer # | |
| Key Attributes | MOSFET N-CH ARR 60V 300mA TSSOP-6(SC-88)SOT-363 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | TOSHIBA | |
| Packaging | TSSOP-6(SC-88)SOT-363 | |
| Current - Continuous Drain(Id) | 300mA | |
| Pd - Power Dissipation | 500mW | |
| RDS(on) | 1.75Ω@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Drain to Source Voltage | 60V | |
| Type | N-Channel | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 40pF | |
| Gate Charge(Qg) | 600pC@4.5V | |
| Operating Temperature | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | TOSHIBA | |
| Packaging | TSSOP-6(SC-88)SOT-363 | |
| Current - Continuous Drain(Id) | 300mA | |
| Pd - Power Dissipation | 500mW | |
| RDS(on) | 1.75Ω@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 60V | |
| Type | N-Channel | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 40pF | |
| Gate Charge(Qg) | 600pC@4.5V | |
| Operating Temperature | - |
Report an ErrorShow similar products (0) >
Features
AI Translation
- AEC - Q101 qualified
- Low drain - source on - resistance: RDS(ON) = 1.05 Ω (typ.) (VGS = 10 V), RDS(ON) = 1.15 Ω (typ.) (VGS = 5.0 V), RDS(ON) = 1.2 Ω (typ.) (VGS = 4.5 V)
Applications
AI Translation
- High - Speed Switching
In-Stock: 10
10 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.3894 | $ 1.95 |
| 50+ | $ 0.3277 | $ 16.39 |
| 150+ | $ 0.3012 | $ 45.18 |
| 500+ | $ 0.2682 | $ 134.10 |
| 3,000+ | $ 0.2535 | $ 760.50 |
| 6,000+ | $ 0.2447 | $ 1468.20 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | TOSHIBA | |
| Packaging | TSSOP-6(SC-88)SOT-363 | |
| Current - Continuous Drain(Id) | 300mA | |
| Pd - Power Dissipation | 500mW | |
| RDS(on) | 1.75Ω@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Drain to Source Voltage | 60V | |
| Type | N-Channel | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 40pF | |
| Gate Charge(Qg) | 600pC@4.5V | |
| Operating Temperature | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | TOSHIBA | |
| Packaging | TSSOP-6(SC-88)SOT-363 | |
| Current - Continuous Drain(Id) | 300mA | |
| Pd - Power Dissipation | 500mW | |
| RDS(on) | 1.75Ω@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 60V | |
| Type | N-Channel | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 40pF | |
| Gate Charge(Qg) | 600pC@4.5V | |
| Operating Temperature | - |
Report an ErrorShow similar products (0) >
Features
AI Translation
- AEC - Q101 qualified
- Low drain - source on - resistance: RDS(ON) = 1.05 Ω (typ.) (VGS = 10 V), RDS(ON) = 1.15 Ω (typ.) (VGS = 5.0 V), RDS(ON) = 1.2 Ω (typ.) (VGS = 4.5 V)
Applications
AI Translation
- High - Speed Switching
C17538147 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

