ISSI IS46TR16640ED-15HBLA1-TR

This article provides detailed information on the 128MX8 and 64MX16 1Gb DDR3 SDRAM with ECC functionality, covering its features, ECC function, options, speed grades, pin assignment descriptions, functional descriptions, and power-on initialization procedures. The power-on initialization must be performed in a specific sequence, including applying power, waiting for RESET# deassertion, starting and stabilizing the clock, and other steps, with corresponding requirements for pin voltages and signal states.

• Standard voltage: VDD and VDDQ = 1.5V ± 0.075V
• High-speed data transfer rate, system frequency up to 800 MHz
• 8 internal banks with concurrent operation
• 8n-bit prefetch architecture
• Programmable CAS latency
• Programmable additive latency: 0, CL - 1, CL - 2
• tCK-based programmable CAS write latency (CWL)
• Programmable burst length: 4 and 8
• Programmable burst sequence: sequential or interleaved
• Dynamic burst length switching
• Auto self-refresh (ASR)
• Self-refresh temperature (SRT)
• Single-bit error correction (per 64 bits)
• Restrictions on burst length and data mask
• Configurations: 128Mx8, 64Mx16
• Package: 96-ball FBGA (9mm x 13mm) for x16; 78-ball FBGA (8mm x 10.5mm) for x8
• Refresh interval: 7.8 μs (8192 cycles/64 ms), temperature range -40°C to 85°C; 3.9 μs (8192 cycles/32 ms), temperature range 85°C to 105°C; 1.95 μs (8192 cycles/16 ms), temperature range 105°C to 125°C
• Partial array self-refresh
• Asynchronous reset pin
• TDQS support (termination data strobe, x8 only)
• OCD (off-chip driver impedance calibration)
• Dynamic ODT (on-die termination)
• Driver strength: RZQ/7, RZQ/6 (RZQ = 240 Ω)
• Write leveling
• Operating temperature: Automotive grade, A1 (TC = -40°C to +95°C); Automotive grade, A2 (TC = -40°C to +105°C); Automotive grade, A3 (TC = -40°C to +125°C)