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DIODES DMN62D4LDW-13 product image
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DIODES DMN62D4LDW-13RoHS

Manufacturer
DIODES
MPN
DMN62D4LDW-13
LCSC Part #
C17533072
Packaging
SOT-363
Customer #
Key Attributes
261mA 3Ω@10V 450mW 2V 2 N-Channel SOT-363 FET, MOSFET Arrays RoHS
Datasheetpdf iconDIODES DMN62D4LDW-13
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1+$ 0.081$ 0.08
200+$ 0.0323$ 6.46
500+$ 0.0313$ 15.65
1,000+$ 0.0307$ 30.70
Standard Packaging10000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerDIODES
PackagingSOT-363
Current - Continuous Drain(Id)261mA
RDS(on)3Ω@10V
Pd - Power Dissipation450mW
Gate Threshold Voltage (Vgs(th))2V
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Number2 N-Channel
Input Capacitance(Ciss)41pF
Gate Charge(Qg)1.04nC@10V
Operating Temperature-55℃~+150℃
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Introduction

AI Translation

This MOSFET is designed to minimize on-resistance (RDS(ON)) while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.

Features

AI Translation
  • Dual N-Channel MOSFET
  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage Current
  • ESD Protection
  • Fully Lead-Free and Fully RoHS Compliant
  • Halogen and Antimony Free. "Green" Device

Applications

AI Translation
  • Motor Control
  • Power Management Functions