MICROCHIP APTCV60HM45RCT3G

Manufacturer	MICROCHIP
MPN	APTCV60HM45RCT3G
LCSC Part #	C17527817
Packaging	-
Customer #
Key Attributes	250W 50A 600V FS (Field Stop) IGBT Modules RoHS
Datasheet	MICROCHIP APTCV60HM45RCT3G

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
Manufacturer	MICROCHIP
Packaging	-
Pd - Power Dissipation	250W
Current - Collector(Ic)	50A
Collector-Emitter Breakdown Voltage (Vces)	600V
Input Capacitance(Cies)	3.15nF@25V
IGBT Type	FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	-
Operating Temperature	-40℃~+175℃@(Tj)

AI Translation

Q2, Q4 CoolMOS™: ultra-low on-resistance, low Miller capacitance, ultra-low gate charge, avalanche energy rated
Q1, Q3 Trench & Field Stop IGBT3: low voltage drop, switching frequency up to 20kHz, RBSOA and SCSOA rated, low tail current
SiC Schottky diodes (CR1, CR3): zero reverse recovery, zero forward recovery, temperature-independent switching characteristics, extremely low stray inductance, Kelvin source for easy gate drive, internal NTC thermistor for temperature monitoring, highly integrated
Optimized conduction and switching losses, direct heatsink mounting (isolated package), low junction-to-case thermal resistance, solderable power and signal terminals for PCB mounting, low profile, easy paralleling due to positive temperature coefficient of V<sub>CEsat</sub>, RoHS compliant

AI Translation

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