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DIODES ZXMP6A16DN8TCRoHS

Manufacturer
MPN
ZXMP6A16DN8TC
LCSC Part #
C17523679
Packaging
SO-8
Customer #
Key Attributes
3.9A 2.15W 125mΩ@4.5V 1V 2 P-Channel SO-8 FET, MOSFET Arrays RoHS
Datasheetpdf iconDIODES ZXMP6A16DN8TC
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QtyUnit Price(Reference Only)Total Amount
1+$ 1.1086$ 1.11
200+$ 0.4422$ 88.44
500+$ 0.4278$ 213.90
1,000+$ 0.4214$ 421.40
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerDIODES
PackagingSO-8
Current - Continuous Drain(Id)3.9A
Pd - Power Dissipation2.15W
RDS(on)125mΩ@4.5V
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage60V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)56.4pF
Number2 P-Channel
Input Capacitance(Ciss)1.021nF
Gate Charge(Qg)24.2nC@10V
Operating Temperature-
Output Capacitance(Coss)83.1pF

Introduction

AI Translation

This new generation of trench MOSFETs adopts a unique structure that combines the advantages of low on-resistance and fast switching speed. This makes them ideal for high-efficiency, low-voltage power management applications.

Features

AI Translation
  • Low on-resistance
  • Fast switching speed
  • Low threshold voltage
  • Low gate drive
  • Thin SOIC package

Applications

AI Translation
  • DC-DC Converter - Power Management - Disconnect Switch - Motor Control