Infineon BFP840FESDH6327XTSA1

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar RF Transistors
Manufacturer	Infineon
Packaging	TSFP-4
Current - Collector Cutoff	400nA
Collector - Emitter Voltage VCEO	2.25V
DC Current Gain	150
Pd - Power Dissipation	75mW
Operating Temperature	-55℃~+150℃
Current - Collector(Ic)	35mA
Transition frequency(fT)	85GHz
type	NPN
Number	1 NPN

AI Translation

The BFP840FESD is a discrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications.

AI Translation

Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power, 1.5 kV HBM ESD hardness
High transition frequency fₜ = 85 GHz to enable best in class noise performance at high frequencies: NFₘᵢₙ = 0.75 dB at 5.5 GHz, 1.8 V, 5 mA
High gain Gₘₛ = 23 dB at 5.5 GHz, 1.8 V, 10 mA
OIP₃ = 22 dBm at 5.5 GHz, 1.8 V, 10 mA
Suitable for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V require a corresponding collector resistor)

AI Translation

WLAN, WiMAX and UWB
Satellite communication systems: satellite radio (SDARs, DAB), navigation systems (e.g. GPS, GLONASS, BeiDou, Galileo)

In-Stock: 270

270 In stock, ships now

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Qty	Unit Price	Total Amount
1+	$ 0.516	$ 0.52
10+	$ 0.4112	$ 4.11
30+	$ 0.3596	$ 10.79
100+	$ 0.308	$ 30.80
500+	$ 0.2773	$ 138.65
1,000+	$ 0.2612	$ 261.20
Standard Packaging3000/Full Reel

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