Advanced Linear Devices ALD210808PCL

The ALD210808A/ALD210808 precision enhanced-mode N-channel EPAD MOSFET arrays are precision-matched at the factory using ALD's proven EPAD CMOS technology. These quad monolithic devices are enhanced versions of the ALD110808A/ALD110808 EPAD MOSFET family, featuring higher forward transconductance and output conductance, especially at very low supply voltages.

The ALD210808A/ALD210808 are suited for low-voltage, low-power small-signal applications. They feature precise threshold voltages, enabling circuit designs with input/output signals referenced to ground over a wider operating voltage range. Using these devices, multi-stage cascaded circuits can be constructed to operate at extremely low supply/bias voltages. For example, a micro-power input amplifier stage operating at a supply voltage below 1.0V has been successfully built using these devices.

The ALD210808A EPAD MOSFET gate threshold voltage VGS(th) is precisely set to +0.80V ± 0.01V (IDS = +10μA, VDS = 0.1V), with a typical offset voltage of only ± 0.001V (1mV), delivering excellent matched electrical characteristics. Integrated on a single monolithic chip, they also exhibit outstanding temperature tracking performance. These precision devices serve as versatile design components for a wide range of analog small-signal applications, including current mirrors, matched circuits, current sources, differential amplifier input stages, transmission gates, and fundamental building blocks for multiplexers. They also excel in limited supply voltage applications such as ultra-low-level voltage clamping and micro-power normally-on circuits.

In addition to precise matched electrical characteristics, each individual EPAD MOSFET exhibits consistent manufacturing characteristics, allowing users to rely on tight design limits across different production lots. With minimal offset voltage and differential thermal response, these devices are suitable for switching and amplification applications in +0.1V to +10V (± 0.05V to ± 5V) supply systems requiring low input bias current, low input capacitance, and fast switching speed. When VGS > +0.80V, the devices exhibit enhancement-mode characteristics; when VGS < +0.80V, they operate in the subthreshold region with well-controlled turn-off and subthreshold level behavior, identical to standard enhancement-mode MOSFET operation.

The ALD210808A/ALD210808 feature high input impedance (2.5 × 10^10Ω) and high DC current gain (>10^8). At 25°C, with a drain output current of 30mA and an input current of 300pA, an example DC current gain calculation yields 30mA / 300pA = 100,000,000, implying a dynamic operating current range of approximately eight orders of magnitude.

• Precise VGS(th) = +0.80 V ± 0.010 V
• VOS (VGS(th) matching) max 2 mV / 10 mV
• Sub-threshold voltage (micro-power) operation
• Minimum operating voltage < 800 mV
• Minimum operating current < 1 nA
• Minimum operating power < 1 nW
• Operating current range >100,000,000:1
• High transconductance and output conductance
• Low RDS(ON) of 25 Ω
• Output current >50 mA
• Matched and tracking temperature coefficients
• Tight lot-to-lot parameter control
• Positive, zero, and negative VGS(th) temperature coefficients
• Low input capacitance and leakage current

• Low-overhead current mirrors and current sources
• Zero-power normally-on circuits
• Energy harvesting detectors
• Ultra-low voltage analog and digital circuits
• Zero-power fail-safe circuits
• Backup battery circuits and power failure detectors
• Ultra-low level voltage clamps
• Ultra-low level zero-crossing detectors
• Matched source followers and buffers
• Precision current mirrors and current sources
• Matched capacitive probe and sensor interfaces
• Charge detectors and charge integrators
• High-gain differential amplifier input stages
• Matched peak detectors and level translators
• Multi-channel sample-and-hold switches
• Precision current multipliers
• Discrete matched analog switches/multiplexers
• Micropower discrete voltage comparators