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DIODES DMN1150UFL3-7 product image
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DIODES DMN1150UFL3-7RoHS

Manufacturer
DIODES
MPN
DMN1150UFL3-7
LCSC Part #
C17476197
Packaging
X2-DFN1310-6
Customer #
Key Attributes
2A 185mΩ@2.5V 900mW 1V 2 N-Channel X2-DFN1310-6 FET, MOSFET Arrays RoHS
Datasheetpdf iconDIODES DMN1150UFL3-7

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerDIODES
PackagingX2-DFN1310-6
Current - Continuous Drain(Id)2A
RDS(on)185mΩ@2.5V
Pd - Power Dissipation900mW
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage12V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)23pF
Number2 N-Channel
Input Capacitance(Ciss)115pF
Gate Charge(Qg)1.4nC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)25pF
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.

Features

AI Translation
  • 1.3 mm² footprint
  • Ultra-thin package — 0.35 mm profile
  • Low gate threshold voltage
  • Fast switching speed
  • Ultra-compact SMT package
  • Gate ESD protection
  • Fully lead-free and RoHS compliant
  • Halogen and antimony-free, "Green" device
  • AEC-Q101 qualified for high reliability

Applications

AI Translation
  • Motor control
  • Power management functions
  • Backlight illumination
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.1471$ 0.15
200+$ 0.0587$ 11.74
500+$ 0.0568$ 28.40
1,000+$ 0.0558$ 55.80
Standard Packaging3000/Full Reel
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