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PANJIT PJS6830_S1_00001 product image
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PANJIT PJS6830_S1_00001RoHS

Manufacturer
PANJITAsian Brands
MPN
PJS6830_S1_00001
LCSC Part #
C17469832
Packaging
SOT-23-6
Customer #
Key Attributes
2A 400mΩ@1.8V 1.25W 1V 2 N-Channel SOT-23-6 FET, MOSFET Arrays RoHS
Datasheetpdf iconPANJIT PJS6830_S1_00001
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.194$ 0.19
200+$ 0.0774$ 15.48
500+$ 0.0748$ 37.40
1,000+$ 0.0736$ 73.60
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerPANJIT
PackagingSOT-23-6
Current - Continuous Drain(Id)2A
RDS(on)400mΩ@1.8V
Pd - Power Dissipation1.25W
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage20V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)9.1pF
Number2 N-Channel
Input Capacitance(Ciss)92pF
Gate Charge(Qg)60nC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)25pF
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Introduction

AI Translation

MwT-9F is a GaAs MESFET device with a nominal gate length of 0.25 microns and a gate width of 750 microns, ideally suited for applications requiring moderate linear power. It can serve as a driver stage for high-power communication amplifiers or broadband amplifiers, with easy matching. All dies are passivated with silicon nitride (SiN).

Features

AI Translation
  • RDS(ON) < 150mΩ at VGS = 4.5V, ID = 2.0A
  • RDS(ON) < 215mΩ at VGS = 2.5V, ID = 1.5A
  • RDS(ON) < 400mΩ at VGS = 1.8V, ID = 0.5A
  • Advanced trench process technology
  • Optimized for switching loads, PWM applications, and similar uses
  • ESD protection: 2KV HBM
  • Lead-free, RoHS 2.0 compliant
  • Eco-friendly molding compound per IEC 61249