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Infineon FP100R12N2T7BPSA2 product image
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Infineon FP100R12N2T7BPSA2RoHS

Manufacturer
MPN
FP100R12N2T7BPSA2
LCSC Part #
C17461901
Packaging
Through Hole,107.5x45mm
Customer #
Key Attributes
IGBT 1.2kV 100A TH
Datasheetpdf iconInfineon FP100R12N2T7BPSA2
In-Stock: 5
5 In stock, ships now
Not recommended for new designs
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QtyUnit PriceTotal Amount
1+$ 50.0886$ 50.09
30+$ 47.4993$ 1424.98
Standard Packaging15/Full Tray

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/IGBT Modules
ManufacturerInfineon
PackagingThrough Hole,107.5x45mm
Td(off)324ns
Pd - Power Dissipation20mW
Td(on)171ns
Current - Collector(Ic)100A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)76pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)1.5V@15V,100A
Gate Charge(Qg)1.8uC@600V,15V
Operating Temperature-40℃~+175℃@(Tj)
Vce Saturation(VCE(sat))1.72V@100A,15V
Switching Energy(Eoff)6.42mJ
Turn-On Energy (Eon)10.4mJ
Input Capacitance(Cies)21.7nF

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging15
Sales UnitPiece

Features

AI Translation
  • VCES = 1200 V
  • IC nom = 100 A / ICRM = 200 A
  • Low VCEsat
  • Overload operation up to 175 ℃
  • TRENCHSTOPTM IGBT7
  • Al2O3 substrate with low thermal resistance
  • Copper base plate
  • Integrated NTC temperature sensor
  • Solder contact technology

Applications

AI Translation
  • Servo drives
  • Auxiliary inverters
  • Motor drives