Infineon FP100R12N2T7BPSA2
| Manufacturer | |
| MPN | FP100R12N2T7BPSA2 |
| LCSC Part # | C17461901 |
| Packaging | Through Hole,107.5x45mm |
| Customer # | |
| Key Attributes | IGBT 1.2kV 100A TH |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Manufacturer | Infineon | |
| Packaging | Through Hole,107.5x45mm | |
| Td(off) | 324ns | |
| Pd - Power Dissipation | 20mW | |
| Td(on) | 171ns | |
| Current - Collector(Ic) | 100A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 76pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.5V@15V,100A | |
| Gate Charge(Qg) | 1.8uC@600V,15V | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.72V@100A,15V | |
| Switching Energy(Eoff) | 6.42mJ | |
| Turn-On Energy (Eon) | 10.4mJ | |
| Input Capacitance(Cies) | 21.7nF |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 15 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- VCES = 1200 V
- IC nom = 100 A / ICRM = 200 A
- Low VCEsat
- Overload operation up to 175 ℃
- TRENCHSTOPTM IGBT7
- Al2O3 substrate with low thermal resistance
- Copper base plate
- Integrated NTC temperature sensor
- Solder contact technology
Applications
AI Translation
- Servo drives
- Auxiliary inverters
- Motor drives
In-Stock: 5
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 50.0886 | $ 50.09 |
| 30+ | $ 47.4993 | $ 1424.98 |
Standard Packaging15/Full Tray | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Manufacturer | Infineon | |
| Packaging | Through Hole,107.5x45mm | |
| Td(off) | 324ns | |
| Pd - Power Dissipation | 20mW | |
| Td(on) | 171ns | |
| Current - Collector(Ic) | 100A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 76pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.5V@15V,100A | |
| Gate Charge(Qg) | 1.8uC@600V,15V | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.72V@100A,15V | |
| Switching Energy(Eoff) | 6.42mJ | |
| Turn-On Energy (Eon) | 10.4mJ | |
| Input Capacitance(Cies) | 21.7nF |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 15 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- VCES = 1200 V
- IC nom = 100 A / ICRM = 200 A
- Low VCEsat
- Overload operation up to 175 ℃
- TRENCHSTOPTM IGBT7
- Al2O3 substrate with low thermal resistance
- Copper base plate
- Integrated NTC temperature sensor
- Solder contact technology
Applications
AI Translation
- Servo drives
- Auxiliary inverters
- Motor drives
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |

