MACOM MAPR-000912-500S00
| Manufacturer | |
| MPN | MAPR-000912-500S00 |
| LCSC Part # | C17430165 |
| Packaging | - |
| Customer # | |
| Key Attributes | 80V 2.2kW 52.5A NPN Bipolar RF Transistors RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar RF Transistors | |
| Manufacturer | MACOM | |
| Packaging | - | |
| Emitter-Base Voltage(Vebo) | 3V | |
| Collector - Emitter Voltage VCEO | 80V | |
| Pd - Power Dissipation | 2.2kW | |
| DC Current Gain | - | |
| Current - Collector(Ic) | 52.5A | |
| type | NPN | |
| Number | 1 NPN |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 20 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- NPN silicon microwave power transistor, common-base configuration
- Broadband Class C operation, high-efficiency interdigitated structure, diffused emitter ballast resistors
- Gold metallization system
- Internal input and output impedance matching, hermetic metal/ceramic package, RoHS compliant
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 278.4744 | $ 278.47 |
| 200+ | $ 261.5428 | $ 52308.56 |
| 500+ | $ 252.803 | $ 126401.50 |
| 1,000+ | $ 248.4843 | $ 248484.30 |
Standard Packaging20/Full Tray | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar RF Transistors | |
| Manufacturer | MACOM | |
| Packaging | - | |
| Emitter-Base Voltage(Vebo) | 3V | |
| Collector - Emitter Voltage VCEO | 80V | |
| Pd - Power Dissipation | 2.2kW | |
| DC Current Gain | - | |
| Current - Collector(Ic) | 52.5A | |
| type | NPN | |
| Number | 1 NPN |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 20 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- NPN silicon microwave power transistor, common-base configuration
- Broadband Class C operation, high-efficiency interdigitated structure, diffused emitter ballast resistors
- Gold metallization system
- Internal input and output impedance matching, hermetic metal/ceramic package, RoHS compliant
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |

