Advanced Linear Devices ALD210802PCL

The ALD210802 precision enhanced-mode N-channel EPAD MOSFET array is precision-matched at the factory using ALD's proven EPAD CMOS technology. These quad monolithic devices are enhanced versions of the ALD110802 EPAD MOSFET family, featuring higher forward transconductance and output conductance, particularly at very low supply voltages. The ALD210802 is designed for low-voltage, low-power small-signal applications with precise threshold voltages, enabling circuit designs that reference input/output signals to ground over an extended operating voltage range. Using these devices, multi-stage cascaded circuits can be constructed to operate at extremely low supply/bias voltage levels. For example, micropower input amplifier stages operating at supply voltages below 0.2V have been successfully built using these devices. The ALD210802 EPAD MOSFET features excellent matched-pair electrical characteristics, with gate threshold voltage VGS(th) precisely set to +0.20V ± 0.020V (IDS = +10μA, VDS = 0.10V) and a typical offset voltage of only ± 0.002V (2mV). Built on a single monolithic die, they also exhibit excellent temperature tracking characteristics. These precision devices are versatile design components suitable for a wide range of analog small-signal applications, including current mirrors, matched circuits, current sources, differential amplifier input stages, transmission gates, and fundamental building blocks for multiplexers. They also excel in limited supply voltage applications such as extremely low-level voltage clamping and micropower normally-on circuits. In addition to precision matched-pair electrical characteristics, each individual EPAD MOSFET features well-controlled manufacturing characteristics, allowing users to rely on tight design limits across different production lots. These devices are designed to achieve minimum offset voltage and differential thermal response, suitable for switching and amplification applications in +0.1V to +10V (± 0.05V to ± 5V) supply systems where low input bias current, low input capacitance, and fast switching speed are required. When VGS > +0.20V, the devices exhibit enhancement-mode characteristics; when VGS < +0.20V, the devices operate in the subthreshold region, exhibiting conventional subthreshold characteristics with well-controlled cutoff and subthreshold levels, functioning in the same manner as standard enhancement-mode MOSFETs. The ALD210802 features high input impedance (2.5 × 10^10Ω) and high DC current gain (>10^8). At 25°C, with a drain output current of 30mA and an input current of 300pA, an example DC current gain calculation yields 30mA / 300pA = 100,000,000, equivalent to approximately eight orders of magnitude of dynamic operating current range.

• Precise VGS(th) = +0.20 V ± 0.020 V
• VOS (VGS(th) matching) 10 mV maximum
• Sub-threshold (micropower) operation
• Minimum operating voltage < 200mV
• Minimum operating current < 1nA
• Minimum operating power < 1nW
• Operating current range > 100,000,000:1
• High transconductance and output conductance
• Low RDS(ON) of 25Ω
• Output current >50 mA
• Matched and tracking temperature coefficients
• Tight lot-to-lot parameter control
• Positive, zero, and negative VGS(th) temperature coefficients
• Low input capacitance and leakage current

• Low-overhead current mirrors and current sources
• Zero-power normally-on circuits
• Energy harvesting detectors
• Ultra-low voltage analog and digital circuits
• Zero-power fail-safe circuits
• Backup battery circuits and power failure detectors
• Ultra-low level voltage clamps
• Ultra-low level zero-crossing detectors
• Matched source followers and buffers
• Precision current mirrors and current sources
• Matched capacitive probe and sensor interfaces
• Charge detectors and charge integrators
• High-gain differential amplifier input stages
• Matched peak detectors and level shifters
• Multi-channel sample-and-hold switches
• Precision current multipliers
• Discrete matched analog switches/multiplexers
• Micropower discrete voltage comparators