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Littelfuse/IXYS MMIX4G20N250
| Manufacturer | |
| MPN | MMIX4G20N250 |
| LCSC Part # | C17401508 |
| Packaging | SMPD-24 |
| Customer # | |
| Key Attributes | 100W 23A 2.5kV SMPD-24 IGBT Arrays RoHS |
| Datasheet |  Littelfuse/IXYS MMIX4G20N250 |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/IGBT Arrays | |
| Manufacturer | Littelfuse/IXYS | |
| Packaging | SMPD-24 | |
| Td(off) | 136ns | |
| Pd - Power Dissipation | 100W | |
| Td(on) | 57ns | |
| Current - Collector(Ic) | 23A | |
| Collector-Emitter Breakdown Voltage (Vces) | 2.5kV | |
| Reverse Transfer Capacitance (Cres) | 18pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.1V@15V,20A | |
| Gate Charge(Qg) | 53nC@15V | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 3.1V | |
| Reverse Recovery Time(trr) | - | |
| Input Capacitance(Cies) | 1.19nF@15V | |
| Output Capacitance(Coes) | 53pF |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 20 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Silicon chip on Direct Copper Bonding (DCB) substrate
- Isolated mounting surface
- 4000V~ electrical isolation
- High peak current capability
- Low saturation voltage
- Molding epoxy meets UL 94 V-0 flammability rating
- High power density
- Easy to mount
Applications
AI Translation
- Capacitor discharge
- Pulse circuits
Not available now
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/IGBT Arrays | |
| Manufacturer | Littelfuse/IXYS | |
| Packaging | SMPD-24 | |
| Td(off) | 136ns | |
| Pd - Power Dissipation | 100W | |
| Td(on) | 57ns | |
| Current - Collector(Ic) | 23A | |
| Collector-Emitter Breakdown Voltage (Vces) | 2.5kV | |
| Reverse Transfer Capacitance (Cres) | 18pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.1V@15V,20A | |
| Gate Charge(Qg) | 53nC@15V | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 3.1V | |
| Reverse Recovery Time(trr) | - | |
| Input Capacitance(Cies) | 1.19nF@15V | |
| Output Capacitance(Coes) | 53pF |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 20 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Silicon chip on Direct Copper Bonding (DCB) substrate
- Isolated mounting surface
- 4000V~ electrical isolation
- High peak current capability
- Low saturation voltage
- Molding epoxy meets UL 94 V-0 flammability rating
- High power density
- Easy to mount
Applications
AI Translation
- Capacitor discharge
- Pulse circuits
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |