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Infineon BFP650H6327XTSA1 product image
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Infineon BFP650H6327XTSA1RoHS

Manufacturer
Infineon
MPN
BFP650H6327XTSA1
LCSC Part #
C17383470
Packaging
SOT-343-3D
Customer #
Key Attributes
TRANS NPN 4.5V 150mA SOT-343-3D
Datasheetpdf iconInfineon BFP650H6327XTSA1

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar RF Transistors
ManufacturerInfineon
PackagingSOT-343-3D
Emitter-Base Voltage(Vebo)1.2V
Current - Collector Cutoff40nA
Collector - Emitter Voltage VCEO4.5V
Pd - Power Dissipation500mW
DC Current Gain250
Current - Collector(Ic)150mA
Transition frequency(fT)42GHz
typeNPN
Number1 NPN
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The BFP650 is a RF bipolar transistor based on SiGe:C technology. Its transition frequency fₜ of 42 GHz and high linearity characteristics at low currents make the device suitable for energy efficiency designs at frequency as high as 5 GHz. It remains cost competitive without compromising on ease of use.

Features

AI Translation
  • Minimum noise figure NFₘᵢₙ = 1 dB at 2.4 GHz, 3 V, 30 mA
  • High gain Gₘₐ = 17.5 dB at 2.4 GHz, 3 V, 70 mA
  • OIP₃ = 30 dBm at 2.4 GHz, 3 V, 70 mA

Applications

AI Translation
  • Low noise, high linearity amplifiers in SDARS receivers
  • Low noise, high linearity amplifiers for ISM band applications
  • Low noise, high linearity amplifiers for multimedia applications such as CATV
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