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DIODES DMN2710UDWQ-7 product image
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DIODES DMN2710UDWQ-7RoHS

Manufacturer
DIODES
MPN
DMN2710UDWQ-7
LCSC Part #
C17360690
Packaging
SOT-363
Customer #
Key Attributes
800mA 450mΩ@4.5V 490mW 1V 2 N-Channel SOT-363 FET, MOSFET Arrays RoHS
Datasheetpdf iconDIODES DMN2710UDWQ-7
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.1208$ 0.12
200+$ 0.0482$ 9.64
500+$ 0.0466$ 23.30
1,000+$ 0.0458$ 45.80
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerDIODES
PackagingSOT-363
Current - Continuous Drain(Id)800mA
RDS(on)450mΩ@4.5V
Pd - Power Dissipation490mW
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage20V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)6.5pF
Number2 N-Channel
Input Capacitance(Ciss)42pF
Gate Charge(Qg)600pC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)13pF
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Introduction

AI Translation

This next-generation MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining superior switching performance, making it ideal for high-efficiency power management applications.

Features

AI Translation
  • Low on-resistance
  • Low gate threshold voltage
  • Low input capacitance
  • Fast switching speed
  • Low input/output leakage current
  • Complementary pair MOSFET
  • Ultra-small surface mount package
  • ESD protection
  • Fully lead-free and RoHS compliant
  • Halogen- and antimony-free, "Green" device
  • DMN2710UDWQ is intended for automotive applications requiring specific change control; the product is AEC-Q101 qualified, PPAP capable, and manufactured in an IATF 16949 certified facility.

Applications

AI Translation
  • Battery-powered systems and solid-state relays
  • Driver applications: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.
  • Power conversion circuits