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VISHAY SQS944ENW-T1_GE3 product image
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VISHAY SQS944ENW-T1_GE3RoHS

Manufacturer
VISHAY
MPN
SQS944ENW-T1_GE3
LCSC Part #
C17358927
Packaging
-
Customer #
Key Attributes
9A 34mΩ@4.5V 27.8W 2.5V 2 N-Channel FET, MOSFET Arrays RoHS
Datasheetpdf iconVISHAY SQS944ENW-T1_GE3
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.9754$ 0.98
200+$ 0.3902$ 78.04
500+$ 0.3773$ 188.65
1,000+$ 0.3709$ 370.90
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerVISHAY
Packaging-
Current - Continuous Drain(Id)9A
RDS(on)34mΩ@4.5V
Pd - Power Dissipation27.8W
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage40V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)24pF
Number2 N-Channel
Input Capacitance(Ciss)615pF
Gate Charge(Qg)11.5nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)415pF
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Introduction

AI Translation

A 350 W ultra-rugged LDMOS power transistor for broadcast and industrial applications from HF to 600 MHz.

Features

AI Translation
  • Trench FET Power MOSFET
  • AEC-Q101 qualified
  • 100% tested for gate resistance (Rg) and unclamped inductive switching (UIS)
  • RoHS compliant
  • Halogen-free
  • N-channel MOSFET

Applications

AI Translation
  • Industrial, scientific, and medical applications
  • Broadcast transmitter applications