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VISHAY SQJQ906EL-T1_GE3 product image
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VISHAY SQJQ906EL-T1_GE3RoHS

Manufacturer
VISHAY
MPN
SQJQ906EL-T1_GE3
LCSC Part #
C17346162
Packaging
-
Customer #
Key Attributes
160A 187W 2.5V 2 N-Channel FET, MOSFET Arrays RoHS
Datasheetpdf iconVISHAY SQJQ906EL-T1_GE3
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QtyUnit Price(Reference Only)Total Amount
1+$ 3.0349$ 3.03
200+$ 1.2111$ 242.22
500+$ 1.1714$ 585.70
1,000+$ 1.1508$ 1150.80
Standard Packaging2000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerVISHAY
Packaging-
Current - Continuous Drain(Id)160A
RDS(on)-
Pd - Power Dissipation187W
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage40V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Number2 N-Channel
Input Capacitance(Ciss)3.238nF
Gate Charge(Qg)-
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)-
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Introduction

AI Translation

A 35 W LDMOS RF power transistor designed for broadcast transmitters and industrial applications. The transistor operates across a frequency range from HF to 1400 MHz. Its excellent ruggedness and broadband performance make it ideally suited for digital applications.

Features

AI Translation
  • Trench Field Effect Transistor (TrenchFET) Power MOSFET
  • AEC-Q101 Qualified
  • 100% Tested for Rg and UIS
  • Fully Lead (Pb)-Free Device

Applications

AI Translation
  • Communication transmitter applications up to 1400 MHz
  • Industrial applications up to 1400 MHz