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Infineon FP35R12N2T7BPSA2 product image
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Infineon FP35R12N2T7BPSA2RoHS

Manufacturer
Infineon
MPN
FP35R12N2T7BPSA2
LCSC Part #
C17340769
Packaging
Through Hole,107.5x45mm
Customer #
Key Attributes
IGBT 1.2kV 35A TH
Datasheetpdf iconInfineon FP35R12N2T7BPSA2
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QtyUnit Price(Reference Only)Total Amount
1+$ 27.111$ 27.11
30+$ 25.9176$ 777.53
Standard Packaging15/Full Tray
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/IGBT Modules
ManufacturerInfineon
PackagingThrough Hole,107.5x45mm
Td(off)250ns
Pd - Power Dissipation20mW
Td(on)51ns
Current - Collector(Ic)35A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)23pF
IGBT TypeIGBT Module
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.15V@0.75mA
Gate Charge(Qg)548nC
Operating Temperature-40℃~+175℃@(Tj)
Vce Saturation(VCE(sat))1.6V@35A,15V
Switching Energy(Eoff)2.22mJ
Turn-On Energy (Eon)2.9mJ
Input Capacitance(Cies)6.62nF
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging15
Sales UnitPiece

Features

AI Translation
  • Electrical features - VCES = 1200V
  • ICnom = 35A / ICRM = 70A
  • TRENCHSTOPTM IGBT7
  • Low VCEsat
  • Overload operation up to 175℃
  • High power and thermal cycling capability
  • Integrated NTC temperature sensor
  • Copper base plate
  • Al₂O₃ substrate with low thermal resistance
  • Solder contact technology

Applications

AI Translation
  • Auxiliary inverters
  • Motor drives
  • Servo drives