DIODES DMN2008LFU-13
| Manufacturer | |
| MPN | DMN2008LFU-13 |
| LCSC Part # | C17340449 |
| Packaging | UDFN2030-6 |
| Customer # | |
| Key Attributes | 14.5A 9.6mΩ@2.5V 1.7W 1.5V 2 N-Channel UDFN2030-6 FET, MOSFET Arrays RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | UDFN2030-6 | |
| Current - Continuous Drain(Id) | 14.5A | |
| RDS(on) | 9.6mΩ@2.5V | |
| Pd - Power Dissipation | 1.7W | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Drain to Source Voltage | 20V | |
| Type | - | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.418nF | |
| Gate Charge(Qg) | 42.3nC@10V | |
| Operating Temperature | -55℃~+150℃ |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features
AI Translation
- Low On-Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
Applications
AI Translation
- Power Management Functions
- Battery Pack
- Load Switch
Out of Stock
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.6211 | $ 0.62 |
| 200+ | $ 0.2485 | $ 49.70 |
| 500+ | $ 0.2409 | $ 120.45 |
| 1,000+ | $ 0.2363 | $ 236.30 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | UDFN2030-6 | |
| Current - Continuous Drain(Id) | 14.5A | |
| RDS(on) | 9.6mΩ@2.5V | |
| Pd - Power Dissipation | 1.7W | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Drain to Source Voltage | 20V | |
| Type | - | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.418nF | |
| Gate Charge(Qg) | 42.3nC@10V | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features
AI Translation
- Low On-Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
Applications
AI Translation
- Power Management Functions
- Battery Pack
- Load Switch
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

