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DIODES DMN2013UFX-7 product image
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DIODES DMN2013UFX-7RoHS

Manufacturer
DIODES
MPN
DMN2013UFX-7
LCSC Part #
C17315418
Packaging
WDFN5020-6
Customer #
Key Attributes
10A 2.14W 11.5mΩ@4.5V 1.1V 2 N-Channel WDFN5020-6 FET, MOSFET Arrays RoHS
Datasheetpdf iconDIODES DMN2013UFX-7
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.6953$ 0.70
200+$ 0.2772$ 55.44
500+$ 0.2681$ 134.05
1,000+$ 0.2636$ 263.60
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerDIODES
PackagingWDFN5020-6
Configuration-
Current - Continuous Drain(Id)10A
Pd - Power Dissipation2.14W
RDS(on)11.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th))1.1V
Drain to Source Voltage20V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Number2 N-Channel
Input Capacitance(Ciss)2.607nF
Gate Charge(Qg)57.4nC@8V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)-
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Introduction

AI Translation

This next-generation MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining superior switching performance, making it ideal for high-efficiency power management applications.

Features

AI Translation
  • Low on-resistance
  • Low input capacitance
  • Fast switching speed
  • Low input/output leakage current
  • ESD protection
  • Fully lead-free and RoHS compliant
  • Halogen and antimony-free, "Green" device
  • AEC-Q101 qualified, high reliability

Applications

AI Translation
  • General-purpose interface switch — power management function