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Infineon FP75R12N3T7BPSA1 product image
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Infineon FP75R12N3T7BPSA1RoHS

Manufacturer
Infineon
MPN
FP75R12N3T7BPSA1
LCSC Part #
C17307364
Packaging
Through Hole,122x62mm
Customer #
Key Attributes
IGBT 1.2kV 75A TH
Datasheetpdf iconInfineon FP75R12N3T7BPSA1

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/IGBT Modules
ManufacturerInfineon
PackagingThrough Hole,122x62mm
Td(off)289ns
Pd - Power Dissipation20mW
Td(on)145ns
Current - Collector(Ic)75A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)53pF
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.15V@1.7mA
Gate Charge(Qg)1.25uC
Operating Temperature-40℃~+175℃@(Tj)
Vce Saturation(VCE(sat))1.8V@75A,15V
Switching Energy(Eoff)5mJ
Turn-On Energy (Eon)9.09mJ
Input Capacitance(Cies)15.1nF
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging10
Sales UnitPiece

Features

AI Translation
  • Electrical features
  • VCES = 1200 V - IC nom = 75 A / ICRM = 150 A
  • TRENCHSTOPTM IGBT7 - Overload operation up to 175℃ - Low VCE,sat
  • Mechanical features
  • High power and thermal cycling capability
  • Integrated NTC temperature sensor
  • Copper base plate
  • Solder contact technology
  • Standard housing
  • Al2O3 substrate with low thermal resistance

Applications

AI Translation
  • Auxiliary inverters
  • Motor drives
  • Servo drives
In-Stock: 7
7 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 60.1542$ 60.15
30+$ 57.407$ 1722.21
Standard Packaging10/Full Tray
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