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MICROCHIP APT80GA90LD40 product image
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MICROCHIP APT80GA90LD40RoHS

Manufacturer
MPN
APT80GA90LD40
LCSC Part #
C17297346
Packaging
TO-264
Customer #
Key Attributes
625W 145A 900V PT (Punch-Through) TO-264 Single IGBTs RoHS
Datasheetpdf iconMICROCHIP APT80GA90LD40

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
ManufacturerMICROCHIP
PackagingTO-264
Td(off)149ns
Pd - Power Dissipation625W
Operating Temperature-
Td(on)18ns
Current - Collector(Ic)145A
Collector-Emitter Breakdown Voltage (Vces)900V
IGBT TypePT (Punch-Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.1V@15V,47A
Gate Charge(Qg)200nC
Reverse Recovery Time(trr)25ns

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging1
Sales UnitPiece

Introduction

AI Translation

POWER MOS 8® is a high-speed punch-through switching mode IGBT. Low Eoff is achieved through advanced silicon design and lifetime control processes. The reduced Eoff - VCE(ON) trade-off delivers superior efficiency compared to other IGBT technologies. Low gate charge and significantly reduced Cres/Cies ratio provide excellent noise immunity, short delay times, and simple gate drive. The inherent chip gate resistance and capacitance of the polysilicon gate structure help control di/dt during switching, enabling low EMI even at high switching frequencies.

Features

AI Translation
  • Fast switching, low EMI
  • Ultra-low Eoff for maximum efficiency
  • Ultra-low Cres for improved noise immunity
  • Low conduction losses
  • Low gate charge
  • Increased intrinsic gate resistance for low EMI
  • RoHS compliant

Applications

AI Translation

ZVS phase-shifted and other full-bridge, half-bridge, high-power PFC boost, welding, UPS, solar and other inverters, high-frequency high-efficiency industrial applications

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QtyUnit Price(Reference Only)Total Amount
1+$ 36.7784$ 36.78
200+$ 14.675$ 2935.00
500+$ 14.1852$ 7092.60
1,000+$ 13.9434$ 13943.40
Standard Packaging1/Full Tube
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