DIODES DMP2900UDW-13
| Manufacturer | |
| MPN | DMP2900UDW-13 |
| LCSC Part # | C17296351 |
| Packaging | SOT-363 |
| Customer # | |
| Key Attributes | 630mA 460mW 1.05Ω@2.5V 1V 2 P-Channel SOT-363 FET, MOSFET Arrays RoHS |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SOT-363 | |
| Current - Continuous Drain(Id) | 630mA | |
| Pd - Power Dissipation | 460mW | |
| RDS(on) | 1.05Ω@2.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Drain to Source Voltage | 20V | |
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 700pC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SOT-363 | |
| Current - Continuous Drain(Id) | 630mA | |
| Pd - Power Dissipation | 460mW | |
| RDS(on) | 1.05Ω@2.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Drain to Source Voltage | 20V |
| Type | Description | |
|---|---|---|
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 700pC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | - |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This next-generation MOSFET is designed to minimize on-resistance (RDS(ON)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low on-resistance
- Low gate threshold voltage
- Low input capacitance
- Fast switching speed
- Low input/output leakage current
- Complementary pair MOSFET
- Ultra-compact surface mount package
- ESD protection
- Fully lead-free and RoHS compliant
- Halogen- and antimony-free, "Green" device
Applications
AI Translation
- Battery-powered systems and solid-state relays
- Driver: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.
- Power conversion circuits
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.1267 | $ 0.13 |
| 200+ | $ 0.0506 | $ 10.12 |
| 500+ | $ 0.0489 | $ 24.45 |
| 1,000+ | $ 0.0481 | $ 48.10 |
Standard Packaging10000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SOT-363 | |
| Current - Continuous Drain(Id) | 630mA | |
| Pd - Power Dissipation | 460mW | |
| RDS(on) | 1.05Ω@2.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Drain to Source Voltage | 20V | |
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 700pC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SOT-363 | |
| Current - Continuous Drain(Id) | 630mA | |
| Pd - Power Dissipation | 460mW | |
| RDS(on) | 1.05Ω@2.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Drain to Source Voltage | 20V |
| Type | Description | |
|---|---|---|
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 700pC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | - |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This next-generation MOSFET is designed to minimize on-resistance (RDS(ON)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low on-resistance
- Low gate threshold voltage
- Low input capacitance
- Fast switching speed
- Low input/output leakage current
- Complementary pair MOSFET
- Ultra-compact surface mount package
- ESD protection
- Fully lead-free and RoHS compliant
- Halogen- and antimony-free, "Green" device
Applications
AI Translation
- Battery-powered systems and solid-state relays
- Driver: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.
- Power conversion circuits
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

